Temperature dependent EXAFS of InN
نویسندگان
چکیده
منابع مشابه
Temperature dependence of carrier lifetimes in InN
Time-resolved pump–probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10 to 10 cm. The observed decay time at 20 K is well explained by a dominating radiative interband recombination, while at room temperature it is attributed to a defect related nonradiative recombination channel. The te...
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ژورنال
عنوان ژورنال: physica status solidi (a)
سال: 2008
ISSN: 1862-6300
DOI: 10.1002/pssa.200780140